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| SMG6401 -4.3A, -12V,RDS(ON) 50m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG6401 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG6401 is universally preferred for all commercial industrial surface mount application and suited for low S 2 A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 B C D voltage applications such as DC/DC converters. D G H C J K Features * Ultra Low RDS(ON) * 1.8V Gate Rated H G J K L * Fast switching speed Gate Drain S D Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System All Dimension in mm Source G Marking : 6401 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -12 8 -4.3 -3.4 -12 1.38 0.01 Unit V V A A A W W/ C o o 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG6401 Elektronische Bauelemente -4.3mA, -12V,RDS(ON) 50m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -12 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=-250uA Reference to 25 oC ,ID=-1mA VDS=VGS, ID=-250uA VGS= 8V VDS=-16V,VGS=0 VDS=-12V,VGS=0 VGS=-4.5V, ID=-4.3A -0.01 _ _ _ _ _ _ _ _ _ _ _ -1.0 100 -1 -25 50 85 125 Static Drain-Source On-Resistance 2 RDS(ON) _ m[ VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-2A _ _ Total Gate Charge 2 Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ 15 1.3 4 8 11 54 36 985 180 160 12 24 _ _ Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=-4A VDS=-12V VGS=-4.5V _ _ _ _ VDS=-10V ID=-1A nS VGS=-10V RG=3.3[ RD=10[ 1580 _ _ pF VGS=0V VDS=-15V f=1.0MHz _ _ S VDS=-5V, ID=-4A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ Typ. _ Max. -1.2 Unit V Test Condition IS=-1.2A, VGS=0V. Is=4.0A, VGS=0 dl/dt=100A/uS Reverse Recovery Time 2 Trr Qrr _ _ 39 26 _ _ nS nC Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG6401 Elektronische Bauelemente -4.3A, -12V,RDS(ON) 50m [ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG6401 Elektronische Bauelemente -4.3A, -12V,RDS(ON) 50m [ P-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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